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this is information on a product in full production. july 2014 docid15354 rev 10 1/21 2n3700hr hi-rel 80 v, 1 a npn transistor datasheet - production data figure 1. internal schematic diagram features ? hermetic packages ? escc and jans qualified ? up to 100 krad(si) low dose rate description the 2n3700hr is a npn transistor specifically designed for aerospace and hi-rel applications. it is available in the jan qualification system (mil- prf19500) and in the escc qualification system (escc 5000). in case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. to-18 lcc-3 3 1 2 ub 3 1 2 4 3 1 2 pin 4 in ub is connected to the metallic lid bvceo 80 v ic(max) 1 a hfe at 10 v - 150 ma >100 table 1. device summary device qualification system agency specification package radiation level eppl jansr2n3700ubx jansr mil-prf-19500/391 ub 100 krad high and low dose rate - jans2n3700ubx jans mil-prf-19500/391 ub - - 2n3700rubx escc flight 5201/004 ub 100 krad - low dose rate target 2n3700ubx escc flight 5201/004 ub - target soc3700rhrx escc flight 5201/004 lcc-3 100 krad - low dose rate yes soc3700hrx escc flight 5201/004 lcc-3 - yes 2n3700rhrx escc flight 5201/004 to-18 100 krad - low dose rate - 2n3700hrx escc flight 5201/004 to-18 - - www.st.com
contents 2n3700hr 2/21 docid15354 rev 10 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 jans electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 escc electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 ub . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 lcc-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 to-218 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6.1 date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6.2 documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
docid15354 rev 10 3/21 2n3700hr electrical ratings 21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 140 v v ceo collector-emitter voltage (i b = 0) 80 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 1 a p tot total dissipation at t amb 25 c for 2n3700hr 0.5 w for soc3700hrb 0.5 w for soc3700hrb (1) 1. when mounted on a 15 x 15 x 0.6 mm ceramic substrate. 0.76 w total dissipation at t c 25 c for 2n3700hr 1.8 w t stg storage temperature -65 to 200 c t j max. operating junction temperature 200 c table 3. thermal data symbol parameter lcc-3 and ub to-18 unit r thjc thermal resistance junction-case (max) for jan -- c/w thermal resistance junction-case (max) for escc 350 97 r thjsp(is) thermal resistance junction-solder pad (infinite sink) (max) for jan 90 - thermal resistance junction-solder pad (infinite sink) (max) for escc - - r thja thermal resistance junction-ambient (max) for jan 325 - thermal resistance junction-ambient (max) for escc 240 (1) 1. when mounted on a 15 x 15 x 0.6 mm ceramic substrate. 350
electrical characteristics 2n3700hr 4/21 docid15354 rev 10 2 electrical characteristics jans and escc version of the products are assembled and tested in compliance with the agency specification it is qualified in. the electrical characteristics of each version are provided in dedicated tables. t case = 25 c unless otherwise specified. 2.1 jans electrical characteristics table 4. jans electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 140 v - 10 a i ces collector cut-off current (i e = 0) v ce = 90 v v ce = 90 v, t amb = 150 c - 10 5 na a i ebo emitter cut-off current (i c = 0) v eb = 5 v v eb = 7 v - 10 10 na a v (br)ceo collector-emitter breakdown voltage (i b = 0) i c = 30 ma - 80 v v ce(sat) collector-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 500 ma i b = 50 ma - 0.2 0.5 v v v be(sat) base-emitter saturation voltage i c = 150 ma i b = 15 ma - 1.1 v h fe dc current gain i c = 0.1 ma v ce = 10 v 50 - 200 i c = 10 ma v ce = 10 v 90 - i c = 150 ma v ce = 10 v 100 - 300 i c = 150 ma v ce = 10 v t amb = -55 c 40 - i c = 500 ma v ce = 10 v 50 - 200 i c = 1 a v ce = 10 v 15 - h fe small signal current gain v ce = 5 v i c = 1 ma f = 1 khz 80 - 400 v ce = 10 v i c = 50 ma f = 20 mhz 5-20 c obo output capacitance (i e = 0) v eb = 0.5 v 100 khz f 1 mhz -12pf c ibo output capacitance (i e = 0) v eb = 0.5 v 100 khz; f = 1 mhz -60pf
docid15354 rev 10 5/21 2n3700hr electrical characteristics 21 2.2 escc electrical characteristics nf noise figure v ce = 10 v i c = 100 a r g = 1 kw, power bandwidth -4db r'b,cc (1) collector-base time constant v cb =10 v; i c =10 ma; f=79.8 mhz 400 ps t off + t off switching times see circuit figure 6 -30ns 1. this parameter may be determined by applying an rf signal voltage of 1.0 volt (rms) across the collector- base terminals, and measuring the ac voltage drop (veb ) with a high- impedance rf voltmeter across the emitter-base terminals. with f = 79.8 mhz used for the 1.0 volt signal, the following computation applies: r'b , cc(ps) = 2 x veb (mv). table 4. jans electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit table 5. escc 5201/004 electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 90 v - 10 na v cb = 90 v, t amb = 150 c 10 a i ebo emitter cut-off current (i c = 0) v eb = 5 v - 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 a 140 - v v (br)ceo (1) collector-emitter breakdown voltage (i b = 0) i c = 30 ma 80 - v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 a 7 - v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 500 ma i b = 50 ma - 0.2 0.5 v v v be(sat) (1) base-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 150 ma i b = 15 ma; t amb = 110 c 1 0.9 v h fe dc current gain i c = 10 ma, v ce = 10 v 90 i c = 150 ma, v ce = 10 v 100 300 i c = 500 ma, v ce = 10 v 50 i c = 150 ma, v ce = 10 v; t amb = -55 c 40 h fe small signal current gain i c = 50 ma, v ce = 10 v; f = 20 mhz 5
electrical characteristics 2n3700hr 6/21 docid15354 rev 10 2.3 electrical characteristics (curves) c cbo output capacitance (i e = 0) v cb = 10 v, f = 1 mhz 12 pf c ibo input capacitance (i c = 0) v eb = 0.5 v, f = 1 mhz 60 pf 1. pulsed duration = 300 s, duty cycle > 2 % table 5. escc 5201/004 electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit figure 2. dc current gain (v ce =1 v) figure 3. dc current gain (v ce =10 v) figure 4. collector emitter saturation voltage figure 5. base emitter saturation voltage $0y ,f$ ( ?& ?& ?& 9 &( 9 $0y ,f$ ( ?& ?& ?& 9 &( 9 $0y ,f$ ?& ?& ?& k )( 9 $0y ,f$ ?& ?& ?& k )( 9
docid15354 rev 10 7/21 2n3700hr electrical characteristics 21 2.4 test circuits figure 6. jans non saturated switching-time test circuit 1. notes: 2. the rise time (t r ) of the applied pulse shall be 2.0 ns, duty cycle 2 percent and the generator source impedance shall be 50 ohms. sampling oscilloscope: z in 100 k , c in 12 pf, rise time 2.0 ns. +18 v gipd040620131551fsr
electrical characteristics 2n3700hr 8/21 docid15354 rev 10 figure 7. escc resistive load switching test circuit 1. fast electronic switch 2. non-inductive resistor
docid15354 rev 10 9/21 2n3700hr radiation hardness assurance 21 3 radiation hardness assurance the products guaranteed in radiation within the jans system fully comply with the mil- prf-19500/255 specification. the products guaranteed in radiation within the escc system fully comply with the escc 5201/004 and escc 22900 specifications. jans radiation assurance st jans parts guaranteed at 100 krad (si), tested, in full compliancy with the mil-prf- 19500 specification, specifically the group d, subgroup 2 inspection, between 50 and 300 rad/s. on top of the standard jansr high dose rate by wafer lot guarantee, st 2n3700hr series include an additional wafer by wafer 100 krad low dose rate guarantee at 0.1 rad/s, identical to the escc 100 krad guarantee. it is supported with the same radiation verification test report provided with each shipment. a brief summary of the standard high dose rate by wafer lot jansr guarantee is provided below: ? all test are performed in accordance to mil-prf-19500 and test method 1019 of mil- std-750 for total ionizing dose. ? the table below provides for each monitored parameters of the test conditions and the acceptance criteria. table 6. mil-prf-19500 (test method 1019) post radiation electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 140 v - 20 a i ces collector-emitter cut- off current v ce = 90 v 20 na i ebo emitter cut-off current (i c = 0) v eb = 5 v v eb = 7 v - 20 20 na a v (br)ceo collector-emitter breakdown voltage (i b = 0) i c = 30 ma - 80 v v ce(sat) collector-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 500 ma i b = 50 ma - 0.23 0.58 v v v be(sat) base-emitter saturation voltage i c = 150 ma i b = 15 ma 1.1 v [h fe ] post irradiation gain calculation i c = 150 ma v ce = 10 v [50] (1) 1. see method 1019 of mil-std-750 for how to determine [h fe ] by first calculating the delta (1/h fe ) from the pre- and post-radiation h fe . notice the [h fe ] is not the same as h fe and cannot be measured directly. the [h fe ] value can never exceed the pre-radiation minimum h fe that it is based upon. 300 i c = 0.1 ma v ce = 10 v [25] (1) 200 i c = 10 ma v ce = 10 v [45] (1) i c = 500 ma v ce = 10 v [25] (1) 200 i c = 1.0 a v ce = 10 v [7.5] (1)
radiation hardness assurance 2n3700hr 10/21 docid15354 rev 10 escc radiation assurance each product lot is tested according to the escc basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable escc generic and/or detailed specification. st goes beyond the escc specification by performing the following procedure: ? test of 11 pieces by wafer, 5 biased at least 80% of v (br)ceo , 5 unbiased and 1 kept for reference ? irradiation at 0.1 rad (si)/s ? acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in table 7: escc 5201/004 post radiation electrical characteristics ? delivery together with the parts of the radiation verification test (rvt) report of the particular wafer used to manufacture the products. this rvt includes the value of each parameter at 30, 50, 70 and 100 krad (si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100c. table 7. escc 5201/004 post radiation electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 90 v - 10 na i ebo emitter cut-off current (i c = 0) v eb = 5 v - 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 a 140 - v v (br)ceo (1) 1. pulsed duration = 300 s, duty cycle 2 % collector-emitter breakdown voltage (i b = 0) i c = 30 ma 80 - v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 a 7 - v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 500 ma i b = 50 ma - 0.2 0.5 v v v be(sat) (1) base-emitter saturation voltage i c = 150 ma i b = 15 ma 1 v [h fe ] (1) post irradiation gain calculation (2) 2. the post-irradiation gain calculation of [h fe ], made using h fe measurements from prior to and on completion of irradiation testing and after each anneali ng step if any, shall be as specified in milstd-750 method 1019. i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 500 ma v ce = 10 v [45] [50] [25] - [300]
docid15354 rev 10 11/21 2n3700hr radiation hardness assurance 21 table 8. radiation summary radiation test 100 krad escc wafer tested each part tested 5 biased + 5 unbiased dose rate 0.1 rad/s acceptance mil-std-750 method 1019 displacement damage optional agency part number (ex) 5202/001/04r (1) 1. example of the 2n3700 in lcc-3 gold finish. st part number (ex) soc3700rhrg documents coc +rvt
package mechanical data 2n3700hr 12/21 docid15354 rev 10 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 ub figure 8. ub drawings
docid15354 rev 10 13/21 2n3700hr package mechanical data 21 table 9. ub mechanical data dim. mm. min. typ. max. a 1.16 1.42 c 0.46 0.51 0.56 d 0.56 0.76 0.96 e 0.92 1.02 1.12 f 1.95 2.03 2.11 g 2.92 3.05 3.18 i 2.41 2.54 2.67 j 0.42 0.57 0.72 k 1.37 1.52 1.67 l 0.41 0.51 0.61 m 2.46 2.54 2.62 n 1.81 1.91 2.01 r 0.20 r1 0.30 r2 0.56
package mechanical data 2n3700hr 14/21 docid15354 rev 10 4.2 lcc-3 figure 9. lcc-3 drawings
docid15354 rev 10 15/21 2n3700hr package mechanical data 21 table 10. lcc-3 mechanical data dim. mm. min. typ. max. a 1.16 1.42 c 0.45 0.50 0.56 d 0.60 0.76 0.91 e 0.91 1.01 1.12 f 1.95 2.03 2.11 g 2.92 3.05 3.17 i 2.41 2.54 2.66 j 0.42 0.57 0.72 k 1.37 1.52 1.67 l 0.40 0.50 0.60 m 2.46 2.54 2.62 n 1.80 1.90 2.00 r 0.30
package mechanical data 2n3700hr 16/21 docid15354 rev 10 4.3 to-218 figure 10. to-18 drawings table 11. to-18 mechanical data dim. mm. min. typ. max. a 12.7 b 0.49 d 5.3 e 4.9 f 5.8 g 2.54 h 1.2 i 1.16 l 45
2n3700hr order codes docid15354 rev 10 17/21 5 order codes table 12. ordering information cpn agency specification eppl quality level radiation level (1) package lead finish marking (2) packing j2n3700ub1 - - engineering model jans - ub gold j3700ub1 wafflepack 2n3700ub1 - - engineering model escc - ub gold 2n3700ub1 wafflepack soc37001 - - engineering model escc - lcc-3 gold soc37001 wafflepack jansr2n3700ubg mil-prf-19500/391 - jansr 100 krad high and low dose rate ub gold jsr3700 wafflepack jansr2n3700ubt mil-prf-19500/391 - jansr 100 krad high and low dose rate ub solder dip jsr3700 wafflepack jans2n3700ubg mil-prf-19500/391 - jans - ub gold js3700 wafflepack jans2n3700ubt mil-prf-19500/391 - jans - ub solder dip js3700 wafflepack 2n3700rubg 5201/004/06r target escc flight 100 krad low dose rate ub gold 520100406r wafflepack 2n3700rubt 5201/004/07r target escc flight 100 krad low dose rate ub solder dip 520100407r wafflepack 2n3700ubg 5201/004/06 target escc flight - ub gold 520100406 wafflepack 2n3700ubt 5201/004/07 target escc flight - ub solder dip 520100407 wafflepack soc3700rhrg 5201/004/04r yes escc flight 100 krad low dose rate lcc-3 gold 520100404r wafflepack soc3700rhrt 5201/004/05r yes escc flight 100 krad low dose rate lcc-3 solder dip 520100405r wafflepack soc3700hrg 5201/004/04 yes escc flight - lcc-3 gold 520100404 wafflepack
order codes 2n3700hr 18/21 docid15354 rev 10 contact st sales office for information about the specific conditions for: ? products in die form ? other jans quality levels ? tape and reel packing soc3700hrt 5201/004/05 yes escc flight - lcc-3 solder dip 520100405 wafflepack 2n3700rhrg 5201/004/01r - escc flight 100 krad low dose rate to-18 gold 520100401r strip pack 2N3700RHRT 5201/004/02r - escc flight 100 krad low dose rate to-18 solder dip 520100402r strip pack 2n3700hrg 5201/004/01 - escc flight - to-18 gold 520100401 strip pack 2n3700hrt 5201/004/02 - escc flight - to-18 solder dip 520100402 strip pack 1. high dose rate as per mil-prf-19500 specif ication group d, subgroup 2 inspection. low dose rate as per escc specification 229 00. 2. specific marking only. the full marking includes in addition: he engineering models: st logo, date code; country of origin (f r). for escc flight parts: st logo, date code, country of origin (fr), esa logo, serial number of the part within the assembly lot. for jans flight parts: st logo, date code, country of origin (fr), manufacturer code (cstm), serail number of the part within the assembly lot. table 12. ordering information (continued) cpn agency specification eppl quality level radiation level (1) package lead finish marking (2) packing
docid15354 rev 10 19/21 2n3700hr shipping details 21 6 shipping details 6.1 date code data code xyywwz is structured as described below: 6.2 documentation table 13. date code xyywwz e m (escc and jans) 3 last two digits of the year week digits lot index in the week escc flight - jans flight (diffused in singapore) w table 14. documentation provided for each type of product quality level radiation level documentation engineering model - - jans flight - certificate of conformance jansr flight mil-std 100krad certificate of conformance 50 rad/s radiation verification test report st 100krad certificate of conformance 0.1 rad/s radiation verification test report on each wafer escc flight - certificate of conformance 100 krad certificate of conformance 0.1 rad/s radiation verification test report
revision history 2n3700hr 20/21 docid15354 rev 10 7 revision history table 15. document revision history date revision changes 10-jan-2008 1 initial release 07-jan-2010 2 modified table 1: device summary 26-jul-2010 3 modified table 1: device summary , added table 10 on page 15 30-nov-2011 4 ? modified: table 6 on page 9 ? added: section 2.3: electrical characteristics (curves) ? minor text change in the document title on the coverpage 17-apr-2013 5 added: section 3: radiation hardness assurance 11-jun-2013 6 updated order codes in table 1: device summary and table 12: ordering information . updated section 3: radiation hardness assurance . minor text changes. 18-sep-2013 7 updated order codes in table 1: device summary and table 12: ordering information . 25-mar-2014 8 updated order codes in table 1: device summary and table 12: ordering information . updated section 3: radiation hardness assurance . 29-may-2014 9 updated table 1: device summary and table 12: ordering information . 29-jul-2014 10 updated table 5: escc 5201/004 electrical characteristics .
docid15354 rev 10 21/21 2n3700hr 21 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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